NO gas sensor based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition
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منابع مشابه
Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP
The effects of thermal annealing on the emission and microstructural characteristics of GaAs0.88Sb0.10N0.02/InP multiple quantum well (QW) structures were studied by photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM). The results show that the optimum annealing conditions lead to improved PL intensity accompanied by only a small blue shift, contrasting the behavior o...
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Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(100) materials grown under different growth conditions were studied. Effects of III–V source ratios on the films crystalline quality were examined....
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متن کاملCharacterization of highly-oriented ferroelectric PbxBa1−x TiO3 thin films grown by metalorganic chemical vapor deposition
PbxBa1−xTiO3 (0.2 x 1) thin films were deposited on single-crystal MgO as well as amorphous Si3N4/Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD). The ferroelectric films were stoichiometric and highly oriented, with only (001) and (100) orientations evident in x-ray diffraction (XRD) scans. Films on biaxially textured templates had smal...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2019
ISSN: 2045-2322
DOI: 10.1038/s41598-019-43752-z